| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition oxide film for eliminating the need for heat treatment, after film formation. SOLUTION: A thin oxide film by a thermal oxidation method is generated to a silicon substrate 1, and an oxide film by a chemical vapor deposition method is generated on it. In that case, for example, fresh air may be supplied into the chemical vapor deposition apparatus in thermal oxidation. Pressure is maintained at one atmospheric pressure, namely 760 Torrs. The temperature may be set at 700 to 800°C, that is the temperature for chemical vapor deposition. In that case, it is known that a thin thermal oxide film is created uniformly on the entire surface of a wafer simply by leaving as it is approximately for 30 minutes as the treatment time. The film thickness is approximately 10Å. A method for performing thermal oxidation in a diffusion apparatus in the previous process, instead of the inside of the chemical vapor deposition apparatus, may also be considered. This method allows a thin oxide film to be generated at the lower portion of the oxide film due to chemical vapor deposition, thus reducing lattice defects at the interface between silicon and in the oxide film. COPYRIGHT: (C)2004,JPO
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