| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of charge-holding characteristics by suppressing junction leakage, when a reverse bias is applied via an interface level. SOLUTION: The process for forming a trench isolation region comprises a step for performing annealing in NO atmosphere at 850°C for about 30 min after a rounding oxide film is formed, wherein the interface level of the rounding oxide film is reduced through doping of N. Consequently, a junction leakage current can be suppressed when a reverse bias is applied via the interface level. COPYRIGHT: (C)2004,JPO
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