FORMING METHOD OF METAL WIRING AND MANUFACTURE OF DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a forming method of metal wiring for selectively forming the wiring which has low resistivity and improved migration resistance without using reducing gases of hydrogen or the like.

SOLUTION: When the electronegativity of a material for a wiring pattern 31 composed of TiN composing a selected area to form a Cu wiring pattern 32 on a substrate 51 is defined as Xs, the electronegativity of a material composing an interlayer insulating film 29 composed of SiO2which is a non-selected area not to form the Cu wiring pattern 32 is defined as Xn and the electronegativity of an organic metal material for forming the Cu wiring pattern 32 is defined as Xm, a material which satisfies a relational expression of XsCOPYRIGHT: (C)2004,JPO