发明名称 SPUTTERING TARGET FOR FORMING FILM OF MAGNETOOPTICAL RECORDING MEDIUM, AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for forming a film of a magnetooptical recording medium, superior in strength, particularly a bending strength, and to provide a manufacturing method therefor. SOLUTION: This sputtering target has a composition comprising rare earth elements (hereafter written as R) consisting of one or more elements among Tb, Gd and Dy, in an amount of 30-60 wt.%, Si of 0.5-10 wt.%, and the balance iron group metals (hereafter written as T) consisting of one or more elements among Fe, Co, and Ni; and a structure comprising a complex phase consisting of a solid solution phase of T and Si, and a (T, Si)<SB>17</SB>R<SB>2</SB>type intermetallic compound phase, an R-phase, and an R(T, Si)<SB>2</SB>type intermetallic compound phase, wherein the above R-phase is surrounded by the R(T, Si)<SB>2</SB>type intermetallic compound phase, and develops in the boundary between the above complex phase and the R(T, Si)<SB>2</SB>type intermetallic compound phase. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004043875(A) 申请公布日期 2004.02.12
申请号 JP20020202107 申请日期 2002.07.11
申请人 MITSUBISHI MATERIALS CORP 发明人 KOMIYAMA SHOZO
分类号 C23C14/34;G11B11/105;(IPC1-7):C23C14/34 主分类号 C23C14/34
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