Semiconducting device for injecting a spin polarized current in a semiconductor
摘要
<p>Semiconductor arrangement comprises a first semiconductor layer and a second semiconductor layer made from a ferromagnetic material coupled with the first layer. A spin-polarized state of the semiconductor charge carrier is injected into the first layer. The second layer interacts with the charge carrier outside of the second layer so that the Curie temperature of the second layer is at least 250 K.</p>
申请公布号
EP1388898(A1)
申请公布日期
2004.02.11
申请号
EP20020090303
申请日期
2002.08.27
申请人
FREIE UNIVERSITAET BERLIN
发明人
FUMAGALLI, PAUL, PROF. DR.;LIPPITZ, HOLGER;MUELLER, CHRISTIAN;PAGGEL, JENS, DR.