DRAM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A DRAM(Dynamic Random Access Memory) semiconductor device and its manufacturing method are provided to be capable of restraining the generation of leakage current. CONSTITUTION: A DRAM semiconductor device is provided with a semiconductor substrate(100), a plurality of gate stack patterns(108) formed at the upper portion of the semiconductor substrate, a source/drain region(110) formed at the predetermined inner portions of the semiconductor substrate by being aligned at both sidewalls of the gate stack pattern, and a spacer(116) formed at both sidewalls of the gate stack pattern. The DRAM semiconductor device further includes a silicon epitaxial layer(118) formed at the upper portion of the source/drain region, a metal silicide layer(120) formed at the upper portion of the silicon epitaxial layer, and a plurality of metal pads(126a,126b) formed at the metal silicide layer.