发明名称 |
METHOD FOR FABRICATING DOUBLE OXIDIZED BARRIER |
摘要 |
PURPOSE: A method for fabricating a double oxidized barrier is provided to improve magnetic resistance and stability by forming a dual insulating layer. CONSTITUTION: The first material layer is formed by depositing an insulating material. The first insulating layer(22) is formed by oxidizing the first material layer. The second material layer is formed by depositing the same material as the first material layer on the first insulating layer(22). The second insulating layer(24) is formed by oxidizing the second material layer. The first and the second material layers are formed by using one method of a sputtering method, a thermal evaporation method, a molecular beam deposition method, and a chemical vapor deposition method.
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申请公布号 |
KR20040011784(A) |
申请公布日期 |
2004.02.11 |
申请号 |
KR20020044903 |
申请日期 |
2002.07.30 |
申请人 |
SONG, OH SUNG;THE UNIVERSITY OF SEOUL |
发明人 |
LEE, GI YEONG;SONG, OH SUNG |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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