| 摘要 |
A light emitting diode is disclosed comprising a first gallium nitride layer (25) having a first conductivity type. a superlattice on the GaN layer (27) formed of a plurality of repeating sets of alternating layers selected from GaN, InGaN, and AlInGaN, a second GaN layer (30) on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well (31) on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer (32) having the opposite conductivity type to the substrate and an ohmic contact to contact structure.
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