发明名称 MEMORY SYSTEM
摘要 PURPOSE: A memory system is provided to improve a signal integrity on a memory bus channel by making a length of a transmission line in an SIMM(Single In-line Memory Module) type memory module and a length of a transmission line in a DIMM(Double In-line Memory Module) type memory module be different. CONSTITUTION: Transmission lines(TL1,TL2) transmit data among a memory controller(10), sockets(52,54), an SIMM type memory module(20), a DIMM type memory module(40), a memory controller(10), and a socket(52). A resistor(Rs) is mounted between the memory controller(10) and a socket(52) and adapts an impedance. A transmission lines(TL3) transmits data between the sockets(52,54). The SIMM type memory module(20) includes a memory device(22), transmission lines(TL4,TL5) which transmit data between the memory device(22) and the socket(52), and a stub resistor(Rstub) which is mounted between the memory device(22) and the socket(52) and adapts an impedance. The DIMM type memory module(40) includes memory devices(42,44), transmission lines(TL6,TL7) which transmit data between the memory devices(42,44) and the socket(54), and a stub resistor(Rstub) which is mounted between the memory devices(42,44) and the socket(54) and adapts an impedance.
申请公布号 KR20040012366(A) 申请公布日期 2004.02.11
申请号 KR20020045914 申请日期 2002.08.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE JUN;PARK, MYEON JU;SO, BYEONG SE
分类号 G06F12/00;G06F13/12;G06F13/40;(IPC1-7):G06F13/12 主分类号 G06F12/00
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