DOUBLE GATED TRANSISTOR AND METHOD OF FABRICATION,申请号KR20037015974-传众专利搜索

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发明名称	DOUBLE GATED TRANSISTOR AND METHOD OF FABRICATION
摘要
申请公布号	KR20040012900(A)	申请公布日期	2004.02.11
申请号	KR20037015974	申请日期	2003.12.05
申请人		发明人
分类号	H01L21/8238;H01L21/336;H01L27/092;H01L29/49;H01L29/78;H01L29/786	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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