发明名称 |
Thin film transistors and semiconductor device |
摘要 |
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein an orientation ratio of the lattice plane {101} is not smaller than 20% and the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and an orientation ratio of the lattice plane {001} is not larger than 3% and the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and an orientation ratio of the lattice plane {001} is not larger than 5% and the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.
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申请公布号 |
US6690068(B2) |
申请公布日期 |
2004.02.10 |
申请号 |
US20010874204 |
申请日期 |
2001.06.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MITSUKI TORU;KASAHARA KENJI;ASAMI TAKETOMI;TAKANO TAMAE;SHICHI TAKESHI;KOKUBO CHIHO;ARAI YASUYUKI |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/62 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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