发明名称 METHOD FOR REMOVING CONTAMINANT IN PLASMA PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a removing method of contaminant in a plasma processor, which can inexpensively, speedily and securely remove the contaminant in a processing container. SOLUTION: In the removing method of the contaminant in the plasma processor where a prescribed plasma processing is performed on a workpiece W in the vacuumed processing container 4, the plasma processing for removing contaminant is performed by using a substrate where a silicon oxide film is formed on a surface. Thus, contaminant adhering to the surface of a part in the processing container and to a wall face in the container can efficiently be removed outside the container. Since the number of the substrates to be used is small, the cost is reduced and the processing time of a seasoning processing can be shortened. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004039935(A) 申请公布日期 2004.02.05
申请号 JP20020196401 申请日期 2002.07.04
申请人 TOKYO ELECTRON LTD 发明人 NAGAYAMA MASAYUKI;MIHASHI YASUSHI;NAKAYAMA HIROYUKI;HIROSE KEIZO
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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