| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in the polarization characteristic of a ferroelectrics film or a high dielectrics film constituting a capacitor insulating film even when heat treatment in a reducing atmosphere is applied to a ferroelectrics capacitor. SOLUTION: A capacitive element is formed on the surface of an inter-layer insulating film 101 formed on a semiconductor substrate 100. The capacitive element is constituted of a laminated body comprising a lower electrode 102 formed of platinum, a capacitive insulating film 103 composed of SBT (SrTaBiO) containing an element, e.g. titanium, for absorbing hydrogen in crystal grain boundaries, inter-grating positions or pores and an upper electrode 104 formed of platinum. COPYRIGHT: (C)2004,JPO |
