| 摘要 |
PROBLEM TO BE SOLVED: To solve problems on a conventional method for forming an magnesium oxide protective film: wherein, since an organic substance contained in paste is not completely decomposed and removed even if baked at a distortion point or lower of a glass substrate, the function as a protective film cannot be obtained; and, when the baking temperature is high, the production tact is reduced and large electricity is required to maintain high temperatures; and that an expensive glass having a high distortion point must be used as a substrate. SOLUTION: According to the method for forming a dielectric film of the present invention, a dielectric film is formed, on a substrate, from a liquid material comprising a dielectric film material precursor and an organic compound, and the energy beam irradiation or plasma irradiation is carried out after or during the formation of the dielectric film precursor from the liquid material, or during baking thereof. COPYRIGHT: (C)2004,JPO
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