发明名称 |
Method of removing ALF defects after pad etching process |
摘要 |
A method of removing ALF defects on a device after pad etching process, comprising the steps of: (a) applying EKC solution substantially comprising hydroxylamine (HDA) to the device for about 30 min; (b) applying an intermediate rinse chemical, such as Isopropyl alcohol (IPA) or N-methyl pyrrolidone (NMP), to the device for about 0.5 min to 3 min; and (c) applying water to the device. The ALF defects are effectively removed in the method of the invention, and the bad wafers can be turned to the good ones. Consequently, the primary cost during the manufacture is greatly decreased.
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申请公布号 |
US2004023505(A1) |
申请公布日期 |
2004.02.05 |
申请号 |
US20030442267 |
申请日期 |
2003.05.21 |
申请人 |
SU YEN-HUEI;WU CHING-PING;LEE H.W.;LIAN NAN-TZU;LIU HSIN-CHENG |
发明人 |
SU YEN-HUEI;WU CHING-PING;LEE H.W.;LIAN NAN-TZU;LIU HSIN-CHENG |
分类号 |
H01L21/02;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/02 |
代理机构 |
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