发明名称 SUBSTRATE TREATMENT EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To stably carry sufficient active species to a treated substrate, to reduce a treatment temperature, and to simplify a structure. SOLUTION: Substrate treatment equipment is equipped with a quartz reaction tube 1. A gas which needs not be activated and gas which needs be activated are alternately supplied into the reaction tube 1 to carry out desired treatment on wafers 7 stored in the reaction tube 1. In part of the reaction tube 1, a quartz chamber 60 which communicates with the reaction tube 1 is formed as an integral part of the reaction tube 1. The chamber 60 is composed of a discharge section 2 formed outside the reaction tube 1, and a buffer chamber 6 formed inside the reaction tube 1. The discharge section 2 produces plasma from treatment gas which needs be activated which is introduced via a gas introduction port 8, and the gas which needs be activated is activated by the plasma to generate active species. The active species generated in the discharge section 2 are carried through the buffer chamber 6, to be supplied to each wafer 7 stacked inside the reaction tube 1. The treatment gas which needs not be activated is supplied to each wafer 7 through a nozzle 43. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004039795(A) 申请公布日期 2004.02.05
申请号 JP20020193405 申请日期 2002.07.02
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TOYODA KAZUYUKI;KAGAYA TORU;SHIMA NOBUHITO;KONYA TADASHI;ISHIMARU NOBUO
分类号 C23C16/452;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/452
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