FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor which is capable of keeping a junction leakage low and having a low contact resistance while source/drain junctions are kept at a shallow position. SOLUTION: The SOI-MOSFET is equipped with a first silicon layer 103 which is formed on an insulating film 102 and then removed from the insulating film 102 except a channel region, a gate electrode 300 formed on the silicon layer 103 through the gate insulating film 200, a second silicon layer 600 which is formed on the bases and sides of grooves cut in the insulating film 102 located on both sides of the silicon layer 103 in the lengthwise direction of the channel as coming into partial contact with the silicon layer 103 at the sides of the grooves, silicide layers 631 and 632 formed on source/drain regions 601 and 602 formed of the second silicon layer 600, and a diffusion suppressing region which contains As and O as high in concentration as 1019cm-3or above and are formed on the silicide layers 631 and 632 located on the side of the silicon layer 600 kept in contact with the silicon layer 103. COPYRIGHT: (C)2004,JPO