| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a yield is kept high even when signal wiring is arranged above a memory cell region. <P>SOLUTION: A plurality of memory cells, word lines and bit lines are formed on a surface of a semiconductor substrate. Each of the word lines is connected to a plurality of the memory cells, to select the memory cell. The bit line is arranged in an wiring layer above a wiring layer in which the word lines are arranged, and connected to a part of memory cell, to apply a signal read out of the selected memory cell by the word line. The signal wiring 26 is arranged in a wiring layer upper than the bit lines. The signal wiring 26 is partially overlaid with the bit lines. A shield layer 24 is arranged in the wiring layer between the bit lines and the signal wiring 26. When viewed from a visual line vertical to the surface of the semiconductor substrate, the shield layer 24 involves the bit lines in the region including the overlaying part of the bit lines and the signal wiring 26, and an opening 25 is provided in a region where the bit lines are not arranged. <P>COPYRIGHT: (C)2004,JPO |
