| 摘要 |
PROBLEM TO BE SOLVED: To improve stress migration resistance together with the improvement of reliability in a semiconductor device including a metal region. SOLUTION: In an insulating film 101, there is formed lower layer wiring comprising a barrier metal film 102 and a copper-containing metal film 103, on which an interlayer insulating film 104 (or 104a and 104b) is formed. In the interlayer insulating film 104 (or 104a and 104b), there is formed upper layer wiring comprising a barrier metal film 106 (or 106a and 106b) and a copper-containing metal film 111 (or 111a and 111b). Silver-containing metal protective films 108a and 108b are formed on surfaces of the lower wiring and the upper wiring. COPYRIGHT: (C)2004,JPO |
