发明名称 MASKLESS PARTICLE BEAM DEVICE FOR EXPOSING PATTERN ON SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide an aperture means suitable for a charged particle beam pattern writing system having a blanking aperture array. SOLUTION: An aperture array (20) is arranged in a pattern writing region composed of a plurality of alternating lines wherein each line is composed of a first segment (sf) having no aperture, and second segments (r1, r2, r3) each including a large number of apertures separated by an aperture region as lateral offset. The lateral offset is equal to integer times of the aperture width and the length of the first segment is set longer than the lateral offset. It is repeated every n-th (n≥2) line in the direction perpendicular to the line direction. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004040076(A) 申请公布日期 2004.02.05
申请号 JP20030045145 申请日期 2003.01.17
申请人 IMS NANOFABRICATION GMBH 发明人 PLATZGUMMER ELMAR;LOESCHNER HANS;STENGL GERHARD;VONACH HERBERT;CHALUPKA ALFRED;LAMMER GERTRAUD;BUSCHBECK HERBERT;NOWAK ROBERT;WINDISCHBAUER TILL
分类号 G03F7/20;H01J37/04;H01J37/09;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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