| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a device using an active matrix TFT. <P>SOLUTION: In a polycrystalline silicon thin-film used for TFT and a device manufactured by using the same, for transistors TR1 and TR2 which are vertically arranged relative to each other, the probabilities P1 and P2 that the maximum number of respective 'primary' crystal grain boundary is included in an active channel region are indicated by formulas 1 and 2. TFT and a device which has superior homogeneity are provided by providing a polycrystalline silicon thin-film used for TFT whose P1 and P2 are not 0.5, and a device manufactured by using the same. Formula 1: P1=(D1-(Nmax1-1)×Gs1)/Gs1, Formula 2: P2=(D2-(Nmax2-1)×Gs2)/Gs2D1=L1cosθ+W1sinθ, wherein D2=L2cosθ+W2sinθ, L1 and L2 show the length of an active channel of transistors TR1 and TR2. <P>COPYRIGHT: (C)2004,JPO</p> |
