| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas phase thin film manufacturing device capable of accurately measuring the temperature of a semiconductor substrate. SOLUTION: A gas phase thin film manufacturing device is provided with a susceptor (18) for holding and rotating a semiconductor substrate (W), a heater (14) for heating the semiconductor substrate (W) held by the susceptor (18), a gas introducing means (26) for introducing predetermined gas to a first space (16) between the semiconductor substrate (W) held by the susceptor (18) and the heater (14), and a thermometer (22) arranged at the opposite side to the heater (14) for measuring the temperature of the semiconductor substrate (W) from a second space (20) to which the gas (A) is not introduced. COPYRIGHT: (C)2004,JPO
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