| 摘要 |
A semiconductor memory device that efficiently replaces defective word lines by redundancy word lines. The semiconductor memory device includes a plurality of banks, each bank having a plurality of normal word lines and a plurality of redundancy word lines. A defective word line can be replaced by the redundancy word lines when defects occur in the normal word lines. When word line defects occur, redundancy word lines banks adjacent to the bank having the defective work line may be used.
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