| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser wherein a fine chip, if generated by any chance in an outer circumferential edge of an electrode formation surface of a semiconductor laser, drops immediately and does not attach to a semiconductor laser body by halves by an electrode material. SOLUTION: The semiconductor laser 101 is constituted of an n-type GaAs substrate 2, a lower side clad layer 3, a p-type InGaP active layer 4, an upper side clad layer 5, a p-type GaAs contact layer 6, an insulation layer 8 wherein an electrode contact hole 7 is shaped, a surface electrode 102, and a back electrode 103. Both the surface electrode 102 and the back electrode 103 are provided with a 50μm-wide region wherein an electrode is not formed along an outer circumferential edge of an electrode formation surface of the semiconductor laser 101, and all the corners of the surface electrode 102 and the back electrode 103 are rounded. COPYRIGHT: (C)2004,JPO
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