| 摘要 |
PROBLEM TO BE SOLVED: To enable electric charge to be completely transferred so as to reduce random noise by a method wherein a gate electrode is divided into two regions, one of which is used as the gate electrode of a transfer MOS transistor and the other is used as a control electrode for controlling the surface potential of a photodiode, a depletion layer on the surface of the photodiode is controlled so as to control a dark current, and driving pulses for the gate electrode and the potential control electrode are controlled. SOLUTION: A photoelectric converter is equipped with a first conductivity-type semiconductor substrate, a second conductivity-type well region on the first conductivity-type semiconductor substrate, a first conductivity-type photoelectric conversion part formed in the second conductivity-type well region, and a transfer gate for transferring electric charge stored in the photoelectric conversion part. A control gate is located adjacent to the transfer gate on the surface of the photoelectric conversion part. The transfer gate may be insulated from the control gate by a dielectric layer which is formed so as to cover the gate electrode. COPYRIGHT: (C)2004,JPO
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