发明名称 Fuse structure for semiconductor device
摘要 A fuse configuration for a semiconductor apparatus is described. The fuse configuration has a semiconductor material disposed underneath the fuse and is made porous by implantation and subsequent etching, so that it provides a thermal insulation. The thermal insulation protects the semiconductor body when the fuse is blown due to a decreased energy requirement for blowing the fuse.
申请公布号 EP1139422(A3) 申请公布日期 2004.02.04
申请号 EP20010101832 申请日期 2001.01.26
申请人 INFINEON TECHNOLOGIES AG 发明人 WELSER, WOLFGANG
分类号 H01L21/82;H01H69/02;H01H85/00;H01H85/044;H01H85/046;H01H85/08;H01H85/10;H01H85/17;H01L23/525;H01L27/02 主分类号 H01L21/82
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