| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to prevent an alignment key from being lifted off by a lost insulation layer under the alignment key in an etch process for exposing the alignment key, by forming a quadrangular pattern having an opening in its center, by forming the alignment key composed of a lateral axis pattern and a longitudinal axis pattern whose end part is coupled to the quadrangular pattern and by patterning a protection layer to expose a part of the lateral axis pattern and the longitudinal axis pattern. CONSTITUTION: Metal is deposited on a wafer(11) having an insulation layer(12). Metal is patterned to form a quadrangular pattern(13A) having an opening(13D) in its center. An alignment key is composed of a lateral axis pattern and a longitudinal axis pattern(13C) whose end part is coupled to the quadrangular pattern and which are so formed to cross each other in the opening. A protection layer(14) is formed on the resultant structure. The protection layer is patterned to expose a part of the lateral axis pattern and the longitudinal axis pattern.
|
