发明名称 |
Method to deposit a stacked high-kappa gate dielectric for CMOS applications |
摘要 |
A method of forming a layer of high-kappa dielectric material in an integrated circuit includes preparing a silicon substrate; depositing a first layer of metal oxide using ALD with a metal nitrate precursor; depositing another layer of metal oxide using ALD with a metal chloride precursor; and completing the integrated circuit.
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申请公布号 |
US6686212(B1) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020286100 |
申请日期 |
2002.10.31 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
CONLEY, JR. JOHN F.;ONO YOSHI;SOLANKI RAJENDRA |
分类号 |
H01L21/283;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/31;H01L21/316;H01L21/336;H01L21/8238;H01L29/51;H01L29/78;(IPC1-7):H01L21/00;H01L21/824;H01L29/76;H01L27/08 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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