发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
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申请公布号 |
US6686228(B2) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020189935 |
申请日期 |
2002.07.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA HIDEOMI;KUSUYAMA YOSHIHIRO |
分类号 |
H01L21/311;H01L21/768;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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