发明名称 |
Nitride semiconductor light emitting device |
摘要 |
A nitride semiconductor light emitting device of the present invention includes; a GaN substrate into which a group VII element is doped; an intermediate layer section provided on the GaN substrate; and a light emitting layer provided on the intermediate layer section. The intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer.
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申请公布号 |
US6686608(B1) |
申请公布日期 |
2004.02.03 |
申请号 |
US20000656766 |
申请日期 |
2000.09.07 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKAHIRA YOSHIYUKI |
分类号 |
H01L33/06;H01L33/32;H01S5/323;H01S5/343;(IPC1-7):H01L29/221 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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