| 摘要 |
PURPOSE: A sputter target is provided which has a composition selected from the group consisting of high-purity copper and copper-base alloys. CONSTITUTION: The sputter target is characterized in that it has a composition selected from the group consisting of high-purity copper and copper-base alloys; a grain structure, the grain structure being at least about 99 percent recrystallized; a sputter target face having a grain orientation ratio of at least about 10 percent each of {111}, {200}, {220} and {311}; and a grain size of less than about 10 μm for improving sputter uniformity and reducing arcing during sputtering. The sputter target is characterized in that it has a composition selected from the group consisting of high-purity copper and copper-base alloys; a grain structure, the grain structure being at least about 99 percent recrystallized; a sputter target face having a grain orientation ratio of at least about 10 percent each of {111}, {200}, {220} and {311}; and a grain size of less than about 8 μm for improving sputter uniformity and reducing arcing during sputtering.
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