| 摘要 |
PURPOSE: An ESD(Electro-Static Discharge) protection circuit between power supplies, is provided to be capable of preventing the breakage of a gate isolating layer. CONSTITUTION: An ESD protection circuit between power supplies, is provided with a semiconductor substrate(41), the first P well(43) formed at the first predetermined inner portion of the substrate, and an N type deep well(45) formed at the second predetermined inner portion of the substrate for enclosing the first P well. The ESD protection circuit further includes the second P well(47) formed at the third predetermined inner portion of the substrate and isolated from the first P well due to the N type deep well, and an N type impurity region(59) formed at the surface portion of the substrate for contacting the first P well, the second P well, and the N type deep well.
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