CRYSTALLIZATION EQUIPMENT, CRYSTALLIZATION METHOD, THIN FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

PURPOSE: A crystallization apparatus, a crystallization method, a thin film transistor and a display apparatus are provided to realize sufficient lateral growth from a crystal nucleus and to produce a crystallized semiconductor film with a large particle size. CONSTITUTION: A crystallization apparatus includes an illumination system(2) that illuminates a phase shift mask(4) to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film with a light beam that has a light intensity distribution of an inverse peak pattern that has a minimum light intensity in an area corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. The crystallization apparatus comprises an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward a circumference of that area based on the light from the illumination system, and an image-forming optical system(3,5) to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.