发明名称 METHOD FOR FORMING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a semiconductor device is provided to prevent the induction of sidelobe due to the reiteration of exposure energy by performing a multiple exposure process using two or more exposure masks in an exposure process. CONSTITUTION: Two or more exposure masks are separately designed to prevent the reiteration of exposure energy in an exposure process. The exposure processes are performed two or more times by using the exposure masks. A fine pattern is formed on a semiconductor substrate by performing the exposure processes, two or more times. The fine pattern is formed with one of a contact hole, an island pattern, and a line. The exposure mask includes an OPC part and a non-OPC part. The exposure mask is a PSM mask or a binary mask.
申请公布号 KR20040008762(A) 申请公布日期 2004.01.31
申请号 KR20020042451 申请日期 2002.07.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, SANG JUN;KIM, GWANG CHEOL
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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