| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of preventing the generation of a bridge phenomenon between metal lines by using an etch stop layer. CONSTITUTION: After a plurality of lower metal lines(33) are formed at the upper portion of a semiconductor substrate(31), an interlayer dielectric(35) is formed on the entire surface of the resultant structure. An etch stop layer(37) is then formed at the upper portion of the interlayer dielectric. After a photoresist pattern is formed at the upper portion, the etch stop layer and the interlayer dielectric are selectively etched by using the etch stop layer. Then, an upper metal line(41) is formed at the upper portion of the resultant structure. Preferably, the etch stop layer is formed by using one or two selected from a group consisting of a Ti layer, a TiN layer, a PEN(Plasma Enhanced Nitride) layer, an LPN(Low Pressure Nitride) layer, and a polycrystalline silicon layer.
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