| 摘要 |
PURPOSE: A dicing method of a semiconductor wafer is provided to be capable of preventing the propagation of crack for improving the reliability and reproductivity of a device, by applying a directional local thinning structure and forming a cutting groove at the semiconductor wafer. CONSTITUTION: A cutting groove is formed at the upper portion of a semiconductor wafer. A dicing process is then carried out along the cutting groove by applying a directional local thinning structure(40) to the semiconductor wafer. At this time, the directional local thinning structure is that both sides of the semiconductor wafer become thinner and thinner from the cutting groove. At the time, the cutting groove is used as a reference line.
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