METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing short between a gate electrode and a bitline due to losses of a buffer oxide layer. CONSTITUTION: Gate lines including a gate conductive layer(22) and a hard mask(24) are formed on a silicon substrate(20) having a gate oxide layer(21). A buffer oxide layer(25) and a nitride layer(26) are sequentially formed on the resultant structure. The buffer oxide layer is exposed by removing the nitride layer and the buffer oxide layer on the hard mask(24). The exposed buffer oxide layer is partially removed to form a space. The space is filled with a nitride spacer(28).