| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of restraining voids and preventing desorption of HSG(Hemispherical Grain). CONSTITUTION: An interlayer dielectric(22) is formed on a substrate(21). A storage node contact(23) is formed to connect the substrate through the interlayer dielectric. A concave pattern(26) is formed by selectively etching the interlayer dielectric. An amorphous silicon layer is deposited on the resultant structure. An HSG and a metal film(29a) are sequentially formed on the surface of the amorphous silicon layer, thereby forming a lower electrode in the concave pattern. A dielectric film(31) and an upper electrode(32) are then sequentially formed on the lower electrode.
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