| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to reduce a pitch between fuses by using the relation between the thickness of an oxide layer on the fuse and the energy absorptivity of laser beam. CONSTITUTION: A bottom insulating layer(43) is formed on a semiconductor substrate(41). A fuse(45) is formed on the top part of the bottom insulating layer(43). An interlayer dielectric(47) and a passivation layer(49) are formed on the entire surface of the semiconductor substrate(41). A predetermined part of a repair region is exposed by performing the first photo-etch process using a mask. A concavo-convex part is formed by performing the second photo-etch process to remove a part of the interlayer dielectric(47).
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