| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a wiring structure in which no fence is formed even when trench-etching is performed on a film having a low dielectric constant. SOLUTION: A sacrificial layer 107 is formed in the side wall of a via hole 106. Then, after a resist plug 108 and a second wiring trench pattern 109 are formed, a gap equal to the amount of the sacrificial layer 107 is formed between the via hole 106 and the film 104 having the low dielectric constant by removing the layer 107. Since deposits 110 produced in a trench-etching step performed thereafter are caused to deposit in the gap, the deposits 110 do not become a mask at the time of etching the film 104. Consequently, the wiring structure in which no fence is formed can be formed. COPYRIGHT: (C)2004,JPO
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