| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device in which conductivity of a metal layer is improved by suppressing generation of a void or a seal in the metal layer occurring due to a conventional step coverage fault, and to provide a method for manufacturing the same. SOLUTION: The nonvolatile memory device includes a substrate 300 having a first active region and a second active region, a first floating gate 314 provided on the first active region and having a sidewall 320 and made of a conductive material, a first spacer 330 provided in contact with a sidewall 320 of the first floating gate 314 and made of the same conductive material as the floating gate 314, and a control gate 346 provided on the floating gate 314. COPYRIGHT: (C)2004,JPO
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