发明名称 ORGANIC TRANSISTOR, ORGANIC ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an organic electronic transistor which has an insulation film having a superior insulating property and an organic semiconductor film with accelerated crystal growth of organic molecules, and also to provide a method of manufacturing the same. SOLUTION: The organic transistor comprises a gate electrode 2 formed on a substrate 1, gate insulation film 3 formed on the gate electrode 2, a first organic film 4 which contains an organic material having a high wettability which is formed on the gate insulation film 3, a second organic film 5 which contains an organic material consisting of a plurality of organic molecules having a hydrophobic group which is formed on the first insulation film 4, an organic semiconductor film 6 which contains an organic semiconductor material which is formed on the second organic film 5, and source electrode 7 and drain electrode 8 formed on the organic semiconductor film 6. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004031801(A) 申请公布日期 2004.01.29
申请号 JP20020188190 申请日期 2002.06.27
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 FUJISAKI YOSHIHIDE;IINO YOSHIKI;KIKUCHI HIROSHI
分类号 H01L21/471;H01L21/312;H01L21/316;H01L21/473;H01L29/786;H01L51/00;H01L51/05;(IPC1-7):H01L29/786 主分类号 H01L21/471
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