| 发明名称 |
Three dimensional flash cell |
| 摘要 |
A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.
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| 申请公布号 |
US2004016953(A1) |
申请公布日期 |
2004.01.29 |
| 申请号 |
US20020205977 |
申请日期 |
2002.07.26 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LINDSAY ROGER W.;JONES LYLE |
| 分类号 |
H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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