发明名称 |
Manufacturing method for semiconductor devices |
摘要 |
The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
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申请公布号 |
US2004018727(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
US20030460155 |
申请日期 |
2003.06.13 |
申请人 |
HITACHI, LTD. |
发明人 |
YOKOGAWA KENETSU;MOMONOI YOSHINORI;IZAWA MASARU |
分类号 |
H01L21/304;H01L21/00;H01L21/306;H01L21/311;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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