发明名称 |
Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material |
摘要 |
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.
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申请公布号 |
US2004018307(A1) |
申请公布日期 |
2004.01.29 |
申请号 |
US20030372727 |
申请日期 |
2003.03.18 |
申请人 |
PARK IN-SUNG;CHUNG JEONG-HEE;YEO JAE-HYUN |
发明人 |
PARK IN-SUNG;CHUNG JEONG-HEE;YEO JAE-HYUN |
分类号 |
H01L21/205;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316;(IPC1-7):B05D5/12;C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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