| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To produce a phase shifting mask capable of achieving high transfer pattern dimensions, to provide a phase shifting mask which enables production of a high performance large-scale integrated circuit by achieving higher transfer accuracy and to provide a pattern forming method using the phase shifting mask and a solid-state device produced by the pattern forming method. <P>SOLUTION: In the phase shifting mask, a phase shifter is formed by engraving a mask substrate, a light shielding film is extended from an unengraved portion to the engraved portion and the thickness of the light shielding film disposed on the engraved portion is varied to eliminate difference in imaging intensity between the engraved and unengraved portions in the phase shifting mask. <P>COPYRIGHT: (C)2004,JPO</p> |
