发明名称 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent initial or progressive aluminum corrosion, which occurs due to re-exposure of an aluminum wiring when an overlay film of the wiring is etched. SOLUTION: An aluminum thin film is formed on a substrate 201 and then patterned to be an aluminum wiring layer 205. Next, the aluminum wiring layer is coated with an insulating film 206 containing nitrogen and hydrogen atoms. Next, a predetermined area of the insulating film 206 is subjected to dry etching in an atmosphere containing fluorine, thereby the layer 205 is exposed partially or wholly. Next, anti-corrosion treatment for the aluminum wiring layer is performed in a plasma atmosphere containing oxygen. Here, the process of exposing the aluminum wiring partially or wholly and the process of the anti-corrosion treatment for the aluminum wiring layer are successively carried out in a condition where the substrate 201 does not contact with the atmosphere air. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004031384(A) 申请公布日期 2004.01.29
申请号 JP20020180779 申请日期 2002.06.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IZUTSU YASUFUMI
分类号 H01L21/3065;H01L21/302;H01L21/3205;H01L21/768;H01L21/8246;H01L23/52;H01L27/105;(IPC1-7):H01L21/320;H01L21/306 主分类号 H01L21/3065
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