发明名称 OXYGEN DOPING OF JOSEPHSON JUNCTIONS
摘要 A method of forming a grain boundary Josephson junction includes forming a superconducting layer on a substrate, patterning the superconducting layer to form the grain boundary Josephson junction, and annealing the substrate and superconducting layer in oxygen in order to increase the critical current density of the junction. The method is applicable to various types of junctions, including DD, DND, and SND junctions formed on various types of substrates, including bi-crystal substrates and single crystal substrates. The annealing is reversible. Oxygen can be removed from the junction, thereby decreasing the critical current density of the junction. In some instances, after patterning, the superconducting layer has a dimension smaller than a length of a facet in the superconducting layer.
申请公布号 WO03019685(A3) 申请公布日期 2004.01.29
申请号 WO2002CA01326 申请日期 2002.08.28
申请人 D-WAVE SYSTEMS, INC 发明人 IL'ICHEV, EVGENI;IJSSELSTEIJN, ROBBERT, P.J.;STEININGER, MILES, F,H.
分类号 H01L39/24 主分类号 H01L39/24
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