| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantitative analytical method for highly accurately and highly sensitively determining impurity elements in a thin film on a semiconductor substrate. SOLUTION: The quantitative analytical method for determining the impurity elements in the thin film on the semiconductor substrate includes a first process for acquiring a thin film dissolving solution by dissolving in a dissolving solution the thin film made of main components including at least one type of metallic element selected from a group of titanium, germanium, zirconium, molybdenum, silver, cadmium, tin, antimony, tantalum, tungsten, hafnium, and bismuth and the impurity elements except the main components; a second process for preparing the thin film dissolving solution in such a way as to contain a hydrofluoric acid of 0.05 wt.% or more, treating it with a resin having strong base anion exchange capacity, removing the resin, and recovering the solution; and a third process for determining the impurity elements in the solution acquired in the second process. COPYRIGHT: (C)2004,JPO
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