High-stability low-offset-field double-tunnel-junction sensor

摘要

The present invention provides a magnetic tunnel junction memory element comprising two pinned ferromagnetic layers having magnetic orientations pointing in opposite directions and a sense layer arranged between the two pinned ferromagnetic layers and separated from each by a nonmagnetic tunnel barrier layer. The invention also provides methods of fabricating magnetic tunnel junction memory elements as well as magnetoresistive memory devices and processor systems comprising such memory elements.